(Compact Version)
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1. Name : Dr. VASANT NAGESH BHORASKAR.
2. Birth Date and Place : 08-04-1947 (Indore, India )
3. Years of completing : M.Sc. (Physics), 1968
M.Sc. degree University of Indore, Indore. (India)
Ph.D degree Ph.D. (Physics), 1973
University of Pune, Pune. (India)
4. Details of Appointments : Department of Physics,
Positions, etc. held University of Pune, Pune- 411 007
Lecturer in Physics : 1974 – 1979
Reader in Physics : May 1979- Sept. 1993
Professor in Physics : 9th Sept. 1993 onward
5. Address for Correspondence : Department of Physics, University of Pune,
Ganeshkhind, Pune 411 007 (India)
Fax. - + 91-20-569 1684
Tel. - + 91-20-569 2678 Ext.- 421 (O)
+ 91-20-588 8759 (R)
Email: vnb@physics.unipune.ernet.in
6. Teaching Experience : 30 years of Teaching experience at M.Sc.
and M.Phil. (Physics)
Subject Taught
(i) Electronics, (ii) Nuclear Physics,
(iii) Semiconductor Physics,
(iv)Methods in Experimental Physics
(v) Nuclear Techniques, (vi)Laboratory Techniques.
7. Main Fields of Research : Experimental Nuclear Physics,
Radiation Physics, Accelerator Physics.
8. Research Publications : 81 ( Eighty One)
Journals in the main field
of specialization.
9. Number of M.Phil. and Ph.D : Ph.D. 18 (Eighteen)
Students Supervised M..Phil. 27 (Twenty Seven)
10. Awards / Honors : (a) V.K. Jog, Best Teacher Award of
University of Pune, Pune for 2002.
(b) Silver Jubilee Award 2001 of the UDCT,
University of Mumbai, Mumbai
(c) ELCINA AWARD (New Delhi) for 1986
Jointly with BHEL, Bangalore for the best
research work in the field. “Tailoring of
switching characteristics of semiconductor devices using energetic electrons.”
(d) Best Research Paper Prize to three research
papers in different National Conferences
(1976-1992)
11. Membership of Societies : (a) Fellow of Maharashatra Academy
National / International of Sciences, 1988 onwards.
(b) Member N. A. Sc. (Allahabad)
(c) Member of Atomic Energy Society
of Japan, 1978 onwards.
(d) Senior Member IEEE, U.S.A. 1996 onwards.
(e) Member American Physical Soc., New York.
12. Invited Talks Delivered :
Delivered invited talks in a number of National and International workshops/ symposia/ seminars etc held at (i) Nuclear Science Center, New Delhi, (ii) IGCAR, Kalpakkam, (iii) VECC, Calcutta (iv) IOP, Bhubaneswar, (v) CAT, Indore, (vi) Indian Science Congress New Delhi and Pune, (vii) IISC, Bangalore, (viii) BARC, Mumbai, (ix) IIT, New Delhi. (x) Denton, Texas, USA, (xi) Nagoya University, Japan.
13. Details of Assignments in
Foreign Countries :
(a) Department of Physics, University of Western Ontario, London, Canada, 1973-1974 (about four months) worked on Accelerators-Microtrons.
(b) Department of Nuclear engineering, Nagoya University, Nagoya, Japan, one year 1975-76; worked on neutron induced nuclear reactions and gamma-ray spectroscopy of excited nuclei. (Govt. of Japan Fellowship)
(c) University of Western Ontario, London, Canada 1988 (one month); worked on designs of Microtron and electron gun. (Deputed by D. O. E. New Delhi)
(d) Royal Institute of Technology, Stockholm, Sweden (one month) 1988; worked on RaceTrack Microtron and electron irradiation facility.
(e) Visited a few industries and institutions in U.S.A. in connection with the development of electron accelerator facility for Industrial applications April 1988.
(Deputed by D. O. E. New Delhi)
(f) University of Texas, Denton, U.S.A. 1996. Attended an International conference on Accelerators, and deliver an invited talk.
(g) Worked at University of Windsor, Canada for one month August 2002.
14. Admistrative Experience:
Worked on the post of –
(a) Director, University Service and Instrumentation Centre, University of Pune,
Pune (two years) 1984 – 86.
(b) Chairman, Accelerator Users Committee, Nuclear Science Centre,
New Delhi (two Years)
(c) Member Accelerators Users Committee, Nuclear Science Centre,
New Delhi. (two years)
(d) Co-ordinator, Registration Committee, Indian Science Congress, Pune (2000)
(e) Head, Department of Physics, University of Pune, Pune, (Three Months and
from time to time)
(e) Member of Board of Studies in Physics (of a few Universities including Pune)
15. Major Research Contributions:
(a) Designed and assembled the following accelerators in the laboratory and used for research work.
(i) 7 MeV Electron Accelerator “Race-track Microtron”, (ii) 14 MeV Neutron Generator,
(iii) 200 KeV Ion Implantation System.
(b) (i) Measured cross-sections for formation of short lived (ms) meta stable state of nuclei such as Zr-90m, Pb-207m, etc through nuclear reactions induced by 14 MeV neutrons.
(ii) Used 14 MeV neutron induced reactions for landmine detection, analysis of explosive class materials and dating of ancient objects.
(c) (i) Characterized the 1 MeV electrons, 7 MeV electrons, 14 MeV neutrons and swift heavy ions induced defects in silicon and gallium-arsenide, using different techniques.
(ii) Analyzed the 30-80 MeV energy oxygen, boron and lithium ions induced defects in the surface region of crystalline silicon, using different techniques.
(iii) Tailored the switching characteristics of thyristors and diodes with 7 MeV electrons and of diodes with 30-50 MeV boron and lithium ions.
(d) Studied Radiation Enhanced Diffusion of silicon & lithium in GaAs, and of boron and fluorine in polymers using swift heavy ions and electrons.
(e) Developed 1 MeV electron irradiation facility and studied the response of solar cell, MOS devices and electronic component to 1 MeV electrons.
(f) Developed the neutron depth profiling technique and measured the depth distribution of boron and lithium in polymers and boron in metallic glasses.
Prof. V. N. Bhoraskar has carried out work in various fields including radiation damage in semiconductors and nuclear reaction analysis, using electron, neutron and heavy ion beams produced through accelerators. He has designed and fabricated a number of equipment and used in his research work. In addition, he has also developed a few very important techniques involving radiation, which have been used for basic research work in the fields such as semiconductor devices, analysis of explosive class materials, satellite systems, etc. The major scientific contributions made by Prof. V.N.Bhoraskar using electrons, neutrons and heavy ions are described below, in brief.
(I) ELECTRONS:
(a) For the first time in the country, assembled and put into operation a one 7 MeV electron accelerator called Race-Track Microtron. Developed all supporting equipment and subsystems using indigenously available components, as far as possible.
(b) Based on controlling the lifetime of minority carriers through electron irradiation, he developed a method as an alternative to the gold-diffusion process, commonly used in manufacturing silicon-based devices. This method is now adopted by BHEL, Bangalore for reducing the Qrr of Thyristors from 6000 mc to around 2500 mc using the Race-Track Microtron facility. The turn off time of diodes can also be reduced from 300 ns to 150 ns, without much increment in the forward voltage drop.
(c) The depth distribution of the heavy ion induced defects in silicon was studied by measuring the lifetime of minority carriers with source of excitation as 1 MeV pulsed electron beam.
(d) For ISRO Bangalore, under a research program, developed an experimental set-up and studied the irradiation effects of 1 MeV electrons on space quality, (i) MOS devices (ii) electronic components (iii) polymers and (iv) solar cell. Solar cells after exposure to 1 MeV electrons showed degradation in power, which was higher than expected. In MOS devices the effect of stored charge in oxide layer was studied.
(e) Produced bremsstrahlung radiation by bombarding 6 MeV electrons on a tungsten target and characterized using Compton Scattering Technique.
(II) NEUTRONS:
(a) Designed and assembled one 14 MeV neutron generator in his laboratory. This consists of a r.f. ion source, 200 KeV ion accelerator, pneumatic transfer system, controls system, neutron detectors, radioisotope handling systems, etc.
(b) Measured cross section for formation of short lived (ms) metastable states nuclei, such as Zr-90 m, Pb-207 m, Y-90 m, etc at 14 MeV neutron energy.
(c) Studied 14 MeV neutron induced fission of U-238 using glass detector and measured angular distribution of the fission fragment.
(d) Based on neutron-induced reactions and prompt gamma-rays measurements, developed a method for detection of landmines. Analyzed explosive class materials and grafted polymers with nuclear reaction induced by 14 MeV neutrons.
(e) At Dhurva rector, BARC, Mumbai developed a neutron depth profile system.
(f) Using the radiation assisted technique, diffused boron and lithium in polymers at room temperature and measured their depth distribution with NDP technique. Studied diffusion characteristics of boron in metallic glasses annealed at different temperature.
(III) HEAVY IONS:
(a) He was showed that the energy deposited by 50 to 90 MeV energy silicon, oxygen, boron and lithium ions through electronic energy loss process can induce defects or changes in the surface region of the irradiated crystalline silicon, porous silicon and gallium arsenide. He characterized the semiconductor surfaces using techniques such as the low angle X-ray diffraction, the optical reflectivity and the lifetime of minority carriers.
(b) For the first time, he has shown that by reducing the lifetime of minority carriers in selected region of silicon diode, the turn-off time of the diode could be reduced. By inducing defects near the junction with 40-60 MeV lithium and boron ions, the reverse recovery time of diodes could be reduced from 3000 ns to 100 ns. In these diodes the forward voltage drop increases to 1.0 volt from it’s initial value of 0.85 volt
(c) For the first time, he studied the depth distribution of heavy ion induced defects in silicon by etching the sample, in step, and measuring the lifetime of minority carriers with a pulsed electron beam. The peak of the defect profile was found to coincide with the projected range of heavy ion in the irradiated silicon sample.
17. Work Carried out Under I.U.C.D.A.E.F. Indore Projects:
(1) Designed and fabricated one computer control Goniometer system for Neutron Beam experiments. This Goniometer will be a part of the Neutron beam line, being installed in the Dhurva Reactor Hall, BARC, Mumbai. This Goniometer system is made using all the indigenously available components in the Department of Physics, University of Pune, Pune.
(2) A facility for the Neutron Depth Profiling for low Z elements (B, Li, N) using thermal neutrons is established in the Dhurva Reactor Hall, BARC, Mumbai. This facility is in operation for the last five years. The depth profiling of boron and lithium in polymers and metallic glasses samples have been studied.
(3) Used ion beam facility of I.G.C.A.R., Kalpakkam for elemental analysis using Nuclear Reaction Analysis techniques.
(4) Used heavy ions of the Variable Energy Cyclotron Centre, Calcutta, for studying irradiation effects of energetic heavy ions on electronic components.
(5) Used Ion Accelerator of I.O.P., Bhubeneshwa, for studying the elemental depth profiling and R.B.S. studies.
LIST OF PUBLICATIONS (JOURNALS ONLY)
Papers published in Indian and foreign journals by Prof.V.N.Bhoraskar
Total No. of papers : 76 (seventy six)
Foreign Journals : 58 (Fifty eight)
1. Measurements of magnetic field index "n" of the 5 MeV betatron by an a.c. potentiometer.
M.R.Bhiday and V.N.Bhoraskar
Journal of physics E : Scientific Instruments (London), 330 , 4, 1971.
2. Study of radial variation of a.c. magnetic field of 5MeV betatron.
V.N.Bhoraskar and M.R.Bhiday.
Indian Journal of Pure and Applied Physics, 274,11,1974
3. Beam current losses in Race-Track Microtorn.
M.R.Bhiday, V.N.Bhoraskar, V.B.Asgekar and R.K.Bhalla.
Indian Journal of Pure and Applied Physics, 237,12,1974.
4. Imporved resonance in Microtron by orbit shaping
V.B. Asgekar, R.K. Bhalla, M.R. Bhiday, V. N. Bhoraskar and B.S. Raye
Pranama, (An Indian Journal of Physics), 198, 3, 1974.
5. Formation cross-section of Zirconium-90m and Lead-207m with fast neutrons.
V.N.Bhoraskar, S.Amemiya, K.Kotoh, T.Matsui and T. Katoh.
Journal of Nuclear science and Technology (Japan), 343, 13(7), 1976.
6. Excited state of DY-162 in the decay of Tb-162.
K.Kawade, K.Yamamoto, Y.Ikeda, V.N.Bhoraskar and T.Katoh.
Nuclear Physics, 268, A-279,1977.
7. Magnetomorphic oscillation in thin film with unlike parameters
A.M.Ghodgaonkar, V.N.Bhoraskar and A.D.Tillu.
J. Phys. D. Appl. Phys., 1221, 11, 1978.
8. A physical interpretation of specularity parameters
A.M.Ghodgaonkar, V.N.Bhoraskar and A.D.Tillu.
J. Phys. D. Appl. Phys., 147, 11, 1978.
9. Thermally stimulated current spectra in nitrogen implanted fluorinated ethylene and propylene.
J.P.Joag, S.B.Ogale, S.W. Walzade, A.S.Ogale, S.V.Bhoraskar, M.R.Bhide and V.N.Bhoraskar.
Pranama (An Indian Journal of Physics), 343, 14 (5), 1980.
10. A modified electron bombardment type ion source for the study of solids.
S.V.Ghaisas, S.M.Choudhari, M.R.Bhide, V.N.Bhoraskar.
Pranama (An Indian Journal of Physics), 289, 14 (4), 1980.
11. Resistance change in the thin metallic films under ion bombardment.
S.B.Ogale, S.V. Ghaisas, A.S.Ogale, V.N.Bhoraskar and M.R.Bhiday.
Pranama (An Indian Journal of Physics), 75, 15 (1), 1980.
12. Thermal analysis of BaO, MgO and CaO heated on tungsten using mass spectrometric technique.
S.V.Ghaisas, S.M.Choudhari, M.R.Bhide, V.N.Bhoraskar.
Journal of Physical Society of Japan, 175, 48(5), 1980.
13. Effect of inductance in a vacuum vibration ion source.
N.K.Patil, P.N.Kulkarni, M.R.Bhide and V.N.Bhoraskar.
Journal of Physical Society of Japan, 1203, 49(3), 1980.
14. Single cavity 8 MeV Race-Track Microtron.
B. Asgekar, R.K. Bhalla, B.S. Raye, M.R. Bhiday and V. N. Bhoraskar.
Pranama (An Indian Journal of Physics), 479,15 (5), 1980.
15. Estimation of Fluorine with 14 MeV neutrons.
A.G.Joglekar, P.S.Lahoti, M.R.Bhiday and V.N.Bhoraskar.
Radiochem. Radioanal. Letters, 199, 45(3), 1980.
16. A new type of irradiation head for activation analysis.
A.G.Joglekar, P.S.Lahoti, M.R.Bhiday and V.N.Bhoraskar.
Indian Journal of Pure and Applied Physics, 298,18,1980.
17. Isomer ratio and cross-section for the 74 Ge (n,2n) 73m Ge reaction at 14.4 MeV.
V.K.Chindhade, A.G.Joglekar and V.N.Bhoraskar.
Radiochem. Radioanal. Letters, 199, 49(3), 1981.
18. Cross-section measurements of (n.n) and (n,2n) reaction on Zirconium and lead targets at
14.8 MeV.
S.Amemiya, V.N.Bhoraskar, K.Katoh, and T.Katoh
Journal of Nuclear sciences and Technology (Japan), 323, 18(5), 1981.
19. Estimation of bioaccumulation of lead in the aquatic plants using 14 MeV neutron
activation analysis.
V.K.Chindhade, A.G.Joglekar and V.N.Bhoraskar and V.R.Gunale
Radiochem. Radioanal. Letters, 187, 49(5), 1981.
20. Isomer ratio and activation cross-section for the 137 Ba (n,2n) 136m Ba reaction at 14.4 MeV neutron energy
V.K.Chindhade,A.G.Jogkekar, V.N.Bhoraskar
Radiochem. Radioanal. Letters, 391, 56(6), 1982.
21. Some electrical measurements on ion implanted thin metallic and insulating films
S.B.Ogale, S.V.Ghaisas A.S.Ogale, V.N.Bhoraskar,A.S.Nigvekar and M.R.Bhiday.
Radiation Effects, 73, 63, 1982.
22. Cross-section of 50 Ti (n, p) 50m Se reaction at 14.4 MeV neutron energy.
V.K. Chindhade, A.G. Goglekar and V.N. Bhoraskar
Radiochem. Radioanal. Letters, 149, 52(3), 1982.
23. Estimation of fluorine and phosphorus in bones using 14 MeV neutron activation analysis
V.K.Chindhade, C.D.Gogte, A.G.Joglekar and V.N.Bhoraskar
Radiochem. Radioanal. Letters, 141, 52(3), 1982.
24. Formation of silicon nitride layers on crystalline silicon by ion implantation
A.S.Ogale, V.N.Bhoraskar, S.V.Ghaisas, V.P.Godbole, S.B.Ogale
J.Vacuum Science and Technology, 398,B1, 1983
25. Gas pressure regulation in a r.f. ion source
S.S. Jayantha Kumar, V.R. Chindhade and V.N.Bhoraskar
Pranama (An Indian Journal of physics), 453, 22(5), 1984.
26. Modified vacuum vibration ion source for phosphorus and boron ions.
N.K.Patil,M.R.Bhiday and V.N.Bhoraskar
Pranama (An Indian Journal of physics), 245, 23(1), 1984.
27. Analysis of ancient iron object with 14 MeV neutron activation analysis
V.N.Bhoraskar, S.S. Jayantha kumar and S. Mahajan
J. Radioanal. and Nucl. Chem. Lett., 73, 95(2), 1985.
28. Bremstrhlung spectra from lead and tantalum at 6 MeV electron energy.
V.S.Deshmukh and V.N.Bhoraskar
J. Radioanal. and Nucl. Chem. Lett., 87, 103(2), 1986.
29. Thickness measurements of silicon film by 14 MeV neutron activation analysis
S.S. Jayantha Kumar and V.N.Bhoraskar
J. Radioanal. and Nucl. Chem. Lett., 1, 104(1), 1986.
30. Ion induced secondary electron emission form Al2O3 and MgO films.
N.R.Rajopadhya, V.K.Joglekar, V.N.Bhoraskar, S.V. Bhoraskar
Solid State communication, 675, 60(8), 1986.
31. Elemental analysis of aluminum based alloys using 14 MeV neutrons
N.N. Sardesai, P.M.Dhige, and V.N. Bhoraskar
J.Radioanal. and Nucl. Chem. Lett., 227,127(4), 1988.
32. The microtron: a recirculating electron accelerator
Indian J. Phys., 16,62A,1988.
33. A facility of 14 MeV neutron irradiation and activation analysis technique
V.N. Bhoraskar
Indian J. Pure. Appl. Phys.,648,12,1989.
34. Analysis of explosives and propellants by 14 MeV neutron activation analysis techniques
P.M. Dighe, S.G. Kulkarni and V.N. Bhoraskar
Indian J.Phys., 16,60A,1990.
35. Effect of neutrons, electrons and gamma irradiation on grafting of benzyl alcohol onto nylon (6)
V.N. Bhoraskar and N. Nagesh
Radiat. Phys. Chem., 23,37(2), 1991.
36. Cross-section of (n,2n) reactions at 14 MeV neutrons in 46 Ti, 50 Cr and 59 Co
P.M.Dighe, G.R. Pansare, R.Sarkar and V. N. Bhoraskar.
Indian J.Pure and Appl. Phys,. 665,29,1991.
37. Comparison of 14 MeV neutron induced and 1 MeV electron induced radiation damage in
crystalline silicon
S. Padgaonkar, S.D. Dhole, and V.N. Bhoraskar
J. Phys. D.Applied Phys., 24,2,1991.
38. Radiation damage and minority carriers life time in crystalline silicon
V.N. Bhoraskar, S.D. Dhole, Surjit Singh, S.M. Jahagirdar and K.S. Srinivasan
Nucl. Instr., & Meths. B, 99, 62, 1991.
39. Comparison of defects produced in C-Si by 1MeV electron and 14 Mev neutrons
P. Choudhary, S.V. Bhoraskar, S. Padgaonkar and V.N. Bhoraskar
J. Appl. Physics (U.S.A.), 1261,70,1991.
40. 120 Sn(n,a), 117Cd, 54 Cr(n,a), 51 Ti , 58 Ni , (n, p) 58m+g Co, and
29 Si(n, p) 28 Al reaction cross section for 14 MeV neutrons
P.M. Dighe, G.R. Pansare, R. Sarkar and V.N. Bhoraskar
J.Physics G., Nucl. Part Phys., 169, 17,1991.
41. Cross-section of a few (n,a) (n, p) reactions at 14.7 MeV neutrons
G.R. Pansare, P.M. Dighe and V.N. Bhoraskar
Pranama,J.Physics, 425, 3, 1991.
42. Estimation of Zirconium in Fe and Ti based alloys through formation of Zr-90m At 14.7 MeV Neutrons
G.R. Pansare, P.M. Dighe, and V.N. Bhoraskar
Int. J. Radiat. Appl. Instrm. Part C (U. .K.), 213,40,1992.
43. Use of 14 MeV neutrons in analysis of explosive class materials
P.M. Dighe, G. R. Pansare, S.G. Kulkarni and V.N. Bhoraskar
J. Radioanal. Nucl. Chem. - Articles, 277,162, 1992.
44. Measurement of 79 Br (n,2n) 78 Br, 63 Cu (n,2n) 62 Cu, 58 Ni (n,2n) 57 Ni, 54 Fe (n,2n) 53 Fe, 50 Cr (n,2n) 49 Cr and 46 Ti (n,2n) 45 Ti reaction cross-section at 14.7 MeV neutron energy.
G.R.Pansare and V.N.Bhoraskar
Int. J. Modern Physics E (Nuclear physics), 4(1), 1992
45. Cross-section for formation of metastable states of 79 Br, 90 Zr and 95 Tc nuclei at 14 MeV neutron energy.
R.Sarkar and V.N.Bhoraskar
Physical Review C, 2246, 46(6), 1992.
46. Radiation induced grafting of benzyl alcohol onto liquid nitrogen processed nylon (6)
N.Nagesh and V.N.Bhoraskar
Indian J. Pure. Appl. Phys., 450, 30, 1992.
47. Damage induced in silicon by back scattered electrons.
S.D.Dhole and V.N.Bhoraskar.
Nucl. Instr. & Methods., 324,74, 1993.
48. Measurements of backschattered parameters with pulsed electron beam
S.D.Dhole, D.T. Choudhary and V.N.Bhoraskar.
Measurement Science and Technology, 1006, 4, 1993.
49. A charged particle telescope to study relativistic electrons, sub-relativistic protons and mouns
S.K.Kothari, S.P. Bhatnagar, S.D.Dhole and V.N.Bhoraskar
Astrophysics and Space Sciences, 1, 1993.
50. Defects studies in oxygen irradiated silicon MIS structures.
T.A.Raikar, S.V.Bhorakar, S.D.Dhole, V.N.Bhoraskar.
J. Appl. Phys., 4343, 74(7), 1993.
51. A radiation detector which could fetch 1992 Noble prize in physics for master Dr. Georges Charpak. (Note)
V.N.Bhoraskar, Physics Education, July-Sept., P-9,1993
52. A study of grafting of acrylonite onto high-density polyethylene by the neutron activation analysis technique.
G.R.Pansare, N.Nagesh, V.N.Bhoraskar
J.Phys.D. Applied Physics, 871, 27, 1994.
53. Improvement in switching characteristics of silicon diodes through selective zone of defects produced by 6 MeV electrons.
P.S.Bhave, S.T.Chavan and V.N.Bhoraskar.
Nucl. Instr, & Meths., B, 334,103,1995.
54. The response of N-channel EPROM to radiation annealing
P.S.Bhave and V.N.Bhoraskar
Nucl. Instr. & Meths., B, 223,103,1995.
55. Damage induced by 90 MeV in crystalline silicon
S.T.Chavan, P.S. Bhave, V.N.Bhoraskar and D. Kanjilal.
J. Appl. Phys., 2328, 78(4), 1995.
56. Fast neutron activation analysis of glycidyl azide polymers
S.P.Panda, S.G.Kulkarni, S.K.Sah, V.N.Bhoraskar and P.A.Dhokale.
Bull. Mater. Sci., 1125, 19(6),1996.
57. Standardization of process parameters for a chemical reaction using neutron activation analysis technique.
P.A.Dhokale and V.N.Bhoraskar
Measurement Science and Technology, 7, 1, 1996.
58. Improvement in the photoluminescence efficiency of a porous silicon using high energy silicon ion irradiation.
T.M.Bhave, S.V.Bhoraskar, Sriram Kulkarni and V.N.Bhoraskar.
J. Phys. D, Appl. Phys., 462, 29, 1996.
59. Irradiation effects of high energy heavy ions on switching characteristic of p-n junction diodes.
P.S.Bhave and V.N.Bhoraskar.
Nucl. Instr, & Meths., B, 383,127, 1997.
60. Depth distribution of silicon ion induced defects in crystalline silicon.
S.T.Chavan, S.D.Dhole and V.N.Bhoraskar.
J.Appl.Phys., 4805, 82(10), 1997.
61. Irradiation effects in semiconductors.
V.N.Bhoraskar.
Bull. Mater. Sci., 1, 21(5),1997.
62. Divide properties following MeV heavy ion, electron and neutron irradiation.
V.N.Bhoraskar
Applications of accelerators in research and industry, P 1025, Part-II AIP, Press New York, 1997.
63. Enhanced surface activity in nano crystalline aluminum as studied by neutron activation analysis, X-ray photoelectron and infra-red spectroscopy.
P.A.Dokhale, N. D.Sali, P. Madhu Kumar, S.V.Bhoraskar, V.K.Rohatgi , V.N.Bhoraskar, S.K.Date, S. Badrinarayan.
Material Science and Engineering-B, 1826, 49, 1997.
64. Radiation induced crystallization and enhancement in photoluminescence from porous silicon.
T.M.Bhave, S.V.Bhoraskar, Prabhat Singh, V.N.Bhoraskar
Nucl. Instr., & Meths., B, 409, 132, 1997.
65. Spin distribution factor formation of metastable state of Y-50 m and Y-51m through (n,p) reactions over neutron energies 5 to 15 MeV.
Ranjita Sarkar and V.N.Bhoraskar.
Nuclear Physics, A, 3767, 1, 1998.
66. Irradiation effects of 35 MeV lithium ions and 70 MeV oxygen ions on the hole life time and the forward current of silicon diodes.
P.Sathyavathi, P.S.Bhave and V.N.Bhoraskar.
Solid State Communications, 755, 106(11), 1998.
67. A study on boron diffusion in high density polyethylene using (n,a) reaction.
P.A.Dokhale, P.R.Vijayaraghavan, V.N.Bhoraskar.
Material Science and Engineering , B, 1, 57,1998.
68. Irradiation effects of 50 MeV lithium ions on silicon diodes.
P.Sathyavathi and V.N.Bhoraskar.
Nucl. Instr. & Meths., B, 90, 156,1999.
69. Effects of 50 and 80 MeV phosphorus ions on the contribution of interface and oxide state densities in N-channel MOSFETs.
N.S.Shinde, D.Kanjilal, S.D.Dhole and V.N.Bhoraskar.
Nucl. Instr. & Meths., B, 116, 156, 1999.
70. Radiation assisted grafting of vinylidene chloride onto high density polyethylene.
N.Nagesh, P.A.Dokhale and V.N. Bhoraskar.
J.Phys. D. Appl. Phys., 1189, 32, 1999.
71. Heavy ion induced damage in crystalline silicon and diodes.
P. Satyavathi, S.T.Chavan, D.Kanjilal, and V.N.Bhoraskar
Nucl. Instr., & Meths., B, 72, 156,1999.
72. Nitridation of steel using microwave ECR palsma.
M. Naddaf, S.S.Hullavarad, S.V.Bhoraskar,S.R.Sainkar,A.B.Mandale and V.N.Bhoraskar.
Vacuum 64, 163(2001)
73. Irradiation effects of swift heavy ions in gallium arsenide, silicon and silicon diodes.
V.N.Bhoraskar.
Current Science, 25, 80(12), 2001.
74. Study of electrostatic discharge in space grade wire in an electron environment.
S.K.Dash, B.R.Bhat, R.P.Sahu and V.N.Bhoraskar
J. Spacecraft technology,9,11(2),2001.
75. Dielectric properties of 1 MeV electron irradiated polyimide.
P.S.Alegaonkar, P.Balaya, P.S.Goyal and V.N.Bhoraskar.
Applied Physics Letter 640, 4(80), 2002.
76. Refractive index and dielectric constant of boron and fluorine doped polyimide.
P.S.Alegaonkar,A.B.Mandale,S.R.Sainkar and V.N.Bhoraskar
Nucl.Instr., & Meths. B, 194(3), 281-88, 2002.
77. Surface interaction of polyimides with oxygen ECR plasma.
M.Naddaf, C. Balasubramaniam, P.S.Alegaonkar, V.N.Bhoraskar, A.B.Mandle, V. Ganeshan and S.V.Bhoraskar
Nucl. Instr. & Meths. B, 222, 135 (2004).
78. Characterization of polyimide irradiated in silver solution with a pulsed electron beam.
P. S. Alegaonkar and V. N. Bhoraskar
Nucl. Instr. & Meths. B, (In Press) 2004.
79. Synthesis of CdS nanoparticles by electron irradiation technique.
K. A. Bogle, S. D. Dhole and V. N. Bhoraskar
Radi. Eff. and Def. in Sol., 159(3), 157 (2004).
80. A 20keV electron gun system for the electron irradiation experiments.
S. Mahapatra, S. D. Dhole and V. N. Bhoraskar
Nucl. Inst. & Meth. A, (Accepted) 2004.
81. Studies on c-Si exposed to swift fluorine ions.
K. A. Bogle, S. P. Gokhale and V. N. Bhoraskar
Nucl. Inst. & Meth. B, (Communicated) 2004.